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RGTH40TS65DGC11 Tech Specifications
ROHM Semiconductor RGTH40TS65DGC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 17 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.6V | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 20A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 144W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 144W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 40A | |
| Reverse Recovery Time | 58 ns | |
| Turn On Time | 47 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A | |
| Continuous Collector Current | 20A | |
| Turn Off Time-Nom (toff) | 141 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 40nC | |
| Current - Collector Pulsed (Icm) | 80A | |
| Td (on/off) @ 25°C | 22ns/73ns | |
| REACH SVHC | Unknown | |
| RoHS Status | ROHS3 Compliant |
RGTH40TS65DGC11 Documents
Download datasheets and manufacturer documentation for RGTH40TS65DGC11
- DatasheetsRGTH40TS65D
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