In Stock
:
10 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
RGTH00TS65DGC11 Tech Specifications
ROHM Semiconductor RGTH00TS65DGC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 17 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 50A, 10 Ω, 15V | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.6V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2014 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 277W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 277W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 85A | |
| Reverse Recovery Time | 54 ns | |
| Turn On Time | 102 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | |
| Continuous Collector Current | 50A | |
| Turn Off Time-Nom (toff) | 221 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 94nC | |
| Current - Collector Pulsed (Icm) | 200A | |
| Td (on/off) @ 25°C | 39ns/143ns | |
| REACH SVHC | Unknown | |
| RoHS Status | ROHS3 Compliant |
RGTH00TS65DGC11 Documents
Download datasheets and manufacturer documentation for RGTH00TS65DGC11
- DatasheetsRGTH00TS65D
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



