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RGT8BM65DTL Tech Specifications

ROHM Semiconductor  RGT8BM65DTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Collector-Emitter Saturation Voltage 1.65V
Number of Elements 1 Element
Test Conditions 400V, 4A, 50 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 62W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 62W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 8A
Reverse Recovery Time 40 ns
Max Breakdown Voltage 650V
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Continuous Collector Current 4A
Turn Off Time-Nom (toff) 158 ns
IGBT Type Trench Field Stop
Gate Charge 13.5nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 17ns/69ns
RoHS Status ROHS3 Compliant
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RGT8BM65DTL Documents

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