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RGS80TS65DHRC11 Tech Specifications

ROHM Semiconductor  RGS80TS65DHRC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Mfr Rohm Semiconductor
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 73 A
Test Conditions 400V, 40A, 10Ohm, 15V
Collector-Emitter Saturation Voltage 1.65
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Maximum Gate Emitter Voltage - 30 V, + 30 V
Pd - Power Dissipation 272 W
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 450
Continuous Collector Current at 25 C 73 A
Mounting Styles Through Hole
Part # Aliases RGS80TS65DHR
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
RoHS Details
Collector- Emitter Voltage VCEO Max 650 V
Series -
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Power Dissipation 272
Input Type Standard
Power - Max 272 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Continuous Collector Current 73
IGBT Type Trench Field Stop
Gate Charge 48 nC
Current - Collector Pulsed (Icm) 120 A
Td (on/off) @ 25°C 37ns/112ns
Switching Energy 1.05mJ (on), 1.03mJ (off)
Reverse Recovery Time (trr) 103 ns
Product Category IGBT Transistors
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