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RBQ10T65ANZC9 Tech Specifications

ROHM Semiconductor  RBQ10T65ANZC9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FN
Mfr Rohm Semiconductor
Package Tube
Product Status Active
Current - Average Rectified (Io) (per Diode) 10A
Base Product Number RBQ10
Peak Rep Rev Volt 65(V)
Peak Forward Voltage 0.69@5A(V)
Operating Temperature Classification Military
Package Type TO-220FN
Product Depth (mm) 4.5(mm)
Maximum Forward Current 10000(mA)
Rev Curr 70(uA)
Operating Temp Range -55C to 150C
Rad Hardened No
Rectifier Type Schottky Diode
Mounting Through Hole
Ir - Reverse Current 70 uA
Maximum Operating Temperature + 150 C
Mounting Styles Through Hole
Vrrm - Repetitive Reverse Voltage 65 V
If - Forward Current 10 A
Ifsm - Forward Surge Current 50 A
Series -
Packaging Rail/Tube
Technology Si
Pin Count 3 +Tab
Configuration Dual Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 70 μA @ 65 V
Voltage - Forward (Vf) (Max) @ If 690 mV @ 5 A
Forward Current 10000(mA)
Operating Temperature - Junction 150°C
Voltage - DC Reverse (Vr) (Max) 65 V
Forward Voltage 0.69@5A(V)
Peak Reverse Current 70(uA)
Peak Non-Repetitive Surge Current 50(A)
Diode Configuration 1 Pair Common Cathode
Product Schottky Diodes
Vf - Forward Voltage 690 mV
Product Length (mm) 10(mm)
Product Height (mm) 15(mm)
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