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IMT1AT110 Tech Specifications

ROHM Semiconductor  IMT1AT110 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage -500mV
Number of Elements 2 Elements
hFEMin 120
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 1996
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -150mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MT1
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Max Frequency 100MHz
Transition Frequency 140MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
VCEsat-Max 0.5 V
Height 1.1mm
Length 2.9mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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