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EMD4T2R Tech Specifications
ROHM Semiconductor EMD4T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 13 Weeks | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 68 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 | |
| Max Power Dissipation | 150mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *MD4 | |
| Pin Count | 6 | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA | |
| Transition Frequency | 250MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 250MHz | |
| Resistor - Base (R1) | 47k Ω, 10k Ω | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
EMD4T2R Documents
Download datasheets and manufacturer documentation for EMD4T2R
- DatasheetsEMD4T2R-Rohm-datasheet-12552220.pdf
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