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EM6J1T2R Tech Specifications

ROHM Semiconductor  EM6J1T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 17 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *J1
Pin Count 6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 6 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 115pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time 4ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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EM6J1T2R Documents

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