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- NSM21356DW6T1G
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NSM21356DW6T1G Tech Specifications
Rochester Electronics NSM21356DW6T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | TIN | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Power - Max | 230mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN AND PNP | |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V / 220 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V 65V | |
| Resistor - Base (R1) | 47k Ω | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| RoHS Status | ROHS3 Compliant |
NSM21356DW6T1G Documents
Download datasheets and manufacturer documentation for NSM21356DW6T1G
- DatasheetsONSMS11903 Datasheet ONSMS14821 Datasheet
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