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MUN5335DW1T2 Tech Specifications

Rochester Electronics  MUN5335DW1T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish TIN LEAD
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.4
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status Non-RoHS Compliant
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MUN5335DW1T2 Documents

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