RF Micro Devices Inc SGA8343ZSR Single BJT Transistors 120 0.072 A 5 V 0.35 W
SGA8343ZSR
2049-365-SGA8343ZSR
RoHS Compliant
DC Current Gain-Min (hFE): 120,Collector Current-Max (IC): 0.072 A,Collector-Emitter Voltage-Max: 5 V,Power Dissipation-Max (Abs): 0.35 W
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SGA8343ZSR Tech Specifications
RFMD SGA8343ZSR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON GERMANIUM | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Package Description | GREEN, PLASTIC PACKAGE-4 | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | 5A991.G | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8542.33.00.01 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Collector Current-Max (IC) | 0.072 A | |
| DC Current Gain-Min (hFE) | 120 | |
| Collector-Emitter Voltage-Max | 5 V | |
| Highest Frequency Band | C BAND |
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