RF Micro Devices Inc FPD7612 Specialized Transistors
FPD7612
2049-375-FPD7612
RoHS Compliant
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
In Stock Min. : 1
Mult. : 1
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FPD7612 Tech Specifications
RFMD FPD7612 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Part Package Code | DIE | |
| Package Description | DIE | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.40 | |
| Terminal Position | UPPER | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-XUUC-N | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| Power Dissipation Ambient-Max | 0.5 W |
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