RF Micro Devices Inc FPD2250SOT89CESR Specialized Transistors
FPD2250SOT89CESR
2049-375-FPD2250SOT89CESR
RoHS Compliant
RF Power Field-Effect Transistor
In Stock Min. : 1
Mult. : 1
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FPD2250SOT89CESR Tech Specifications
RFMD FPD2250SOT89CESR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | S BAND | |
| Power Dissipation Ambient-Max | 2.5 W |
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