RFMD 2N1613 Single BJT Transistors 30 V 0.8 W 0.5 A 20
2N1613
2049-365-2N1613
RoHS Compliant
Collector-Emitter Voltage-Max: 30 V,Power Dissipation-Max (Abs): 0.8 W,Collector Current-Max (IC): 0.5 A,DC Current Gain-Min (hFE): 20
In Stock Min. : 1
Mult. : 1
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2N1613 Tech Specifications
RFMD 2N1613 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | 2N1613 | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Risk Rank | 5.08 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transition Frequency-Nom (fT) | 60 MHz | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-205AD | |
| Power Dissipation-Max (Abs) | 0.8 W | |
| Collector Current-Max (IC) | 0.5 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Collector-Emitter Voltage-Max | 30 V |
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