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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- FA4L4L-T1B-A
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FA4L4L-T1B-A Tech Specifications
Renesas FA4L4L-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SC-59 | |
| Mfr | Renesas | |
| Package | Bulk | |
| Product Status | Obsolete | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Series | - | |
| Power - Max | 200 mW | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 5mA, 5V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Resistor - Base (R1) | 47 kOhms | |
| Resistor - Emitter Base (R2) | 22 kOhms |
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