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BC856-T Tech Specifications

Rectron  BC856-T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SOT-23-3
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Package Bulk
Mfr PEI-Genesis
Product Status Active
Collector-Emitter Saturation Voltage 650 mV
hFEMin 125
RoHS Compliant
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 200 mW
Transistor Polarity PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 125
Unit Weight 0.000282 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 100 MHz
Part # Aliases BC856
Manufacturer Rectron
Brand Rectron
Maximum DC Collector Current 100 mA
DC Current Gain hFE Max 475
Collector- Emitter Voltage VCEO Max 65 V
Package Description SOT-23, 3 PIN
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Transition Frequency-Nom (fT) 100 MHz
Manufacturer Part Number BC856-T
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer RECTRON LTD
Risk Rank 3.67
Part Package Code SOT-23
Series *
Packaging MouseReel
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150 °C
HTS Code 8541.21.00.95
Subcategory Transistors
Max Power Dissipation 250 mW
Technology Si
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 265
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Polarity PNP
Configuration Single
Element Configuration Single
Gain Bandwidth Product 100 MHz
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors
Collector Emitter Voltage (VCEO) 65 V
Max Collector Current 100 mA
Collector Base Voltage (VCBO) 80 V
Emitter Base Voltage (VEBO) 5 V
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 125
Collector-Emitter Voltage-Max 65 V
Product Category Bipolar Transistors - BJT
Width 1.4 mm
Height 1.15 mm
Length 3 mm
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