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TGF2929-HM Tech Specifications

Qorvo  TGF2929-HM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case NI-360
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage - 2.8 V
Id - Continuous Drain Current 7.2 A
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 140 W
Mounting Styles SMD/SMT
Development Kit TGF2929-HM EVB1
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 25
Part # Aliases TGF2929 1135635
Packaging Waffle
Series TGF2929
Operating Frequency DC to 3.5 GHz
Configuration Single
Output Power 132 W
Transistor Type HEMT
Operating Temperature Range - 40 C to + 85 C
Gain 17.4 dB
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