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TGF2819-FL Tech Specifications

Qorvo  TGF2819-FL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case NI-360
Shipping Restrictions This product may require additional documentation to export from the United States.
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 32 V
Vgs - Gate-Source Breakdown Voltage - 2.9 V
Id - Continuous Drain Current 7.32 A
Maximum Drain Gate Voltage 145 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 86 W
Mounting Styles Screw Mount
Development Kit TGF2819-FS/FL, EVAL BOARD
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 25
Part # Aliases TGF2819 1118709
Packaging Tray
Series TGF2819
Type GaN SiC HEMT
Operating Frequency 3.5 GHz
Configuration Single
Output Power 100 W
Transistor Type HEMT
Operating Temperature Range - 40 C to + 85 C
Gain 14 dB
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