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QPD1009 Tech Specifications

Qorvo  QPD1009 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case QFN-16
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 700 mA
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 17.5 W
Mounting Styles SMD/SMT
Development Kit QPD1009-EVB1
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 50
Vgs th - Gate-Source Threshold Voltage - 2.8 V
Part # Aliases 1132865 1132865
Unit Weight 0.203046 oz
Packaging Tray
Series QPD1009
Operating Frequency 4 GHz
Configuration Single
Output Power 17 W
Transistor Type HEMT
Operating Temperature Range - 40 C to + 85 C
Gain 24 dB
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