PanJit Semiconductor MMBD352W RF Diodes
MMBD352W
1854-353-MMBD352W
RoHS Compliant
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
In Stock Min. : 1
Mult. : 1
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MMBD352W Tech Specifications
Panjit MMBD352W technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 3Terminals | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PAN JIT INTERNATIONAL INC | |
| Package Description | R-PDSO-G3 | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation (Max) | 0.2 W | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.60 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | |
| Diode Type | MIXER DIODE | |
| Frequency Band | VERY HIGH FREQUENCY | |
| Diode Capacitance-Max | 1 pF |
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