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2N7002KDW_R1_00001 Tech Specifications

Panjit  2N7002KDW_R1_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SOT-363-6
Mounting Type Surface Mount
Surface Mount YES
Supplier Device Package SOT-363
Number of Terminals 6Terminals
Transistor Element Material SILICON
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 20 ns
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 200 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.000265 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Forward Transconductance - Min 100 mS
Channel Mode Enhancement
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 800 pC
Rds On - Drain-Source Resistance 3 Ohms
RoHS Details
Typical Turn-Off Delay Time 40 ns
Id - Continuous Drain Current 115 mA
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃ 115mA (Ta)
Mfr Panjit International Inc.
Product Status Active
Package Description SMALL OUTLINE, R-PDSO-G6
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number 2N7002KDW_R1_00001
Package Shape RECTANGULAR
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC
Risk Rank 5.53
Drain Current-Max (ID) 0.115 A
Series NFET-035TS
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
Additional Feature ULTRA LOW RESISTANCE
Subcategory MOSFETs
Technology Si
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels 2 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power - Max 200mW (Ta)
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 35pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL
Product Type MOSFET
Transistor Type 1 N-Channel
Drain-source On Resistance-Max 3 Ω
DS Breakdown Voltage-Min 60 V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 5 pF
Product Category MOSFET
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