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- MMBT3904-AU_R1_000A1
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MMBT3904-AU_R1_000A1 Tech Specifications
Panjit MMBT3904-AU_R1_000A1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-23 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package/Enclosure | SOT-23 | |
| Power dissipation Pd | 250mW | |
| Collector-emitter maximum voltage VCEO | 45V | |
| Collector continuous current | 100mA | |
| Collector-emitter saturation voltage | 550mV | |
| DC current gain hFE | 180 | |
| Characteristic frequency fT | 250MHz | |
| VEBO | 5V | |
| VCBO | 45V | |
| Qualification | AEC-Q101 | |
| Unit Weight | 0.000296 oz | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | Panjit | |
| Brand | Panjit | |
| RoHS | Details | |
| Package | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | |
| Current-Collector (Ic) (Max) | 200 mA | |
| Mfr | Panjit International Inc. | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Manufacturer Part Number | MMBT3904-AU_R1_000A1 | |
| Turn-on Time-Max (ton) | 70 ns | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PAN JIT INTERNATIONAL INC | |
| Turn-off Time-Max (toff) | 250 ns | |
| Risk Rank | 5.54 | |
| Operating temperature | -65℃~150℃ | |
| Packaging | MouseReel | |
| Series | - | |
| JESD-609 Code | e3 | |
| Terminal Finish | Tin (Sn) | |
| Subcategory | Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 225 mW | |
| fet type | NPN | |
| Transistor Application | SWITCHING | |
| Size | 2.9*1.3*1 | |
| Polarity/Channel Type | NPN | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V | |
| Current - Collector Cutoff (Max) | 50nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | |
| Frequency - Transition | 300MHz | |
| Collector Current-Max (IC) | 0.2 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Collector-Emitter Voltage-Max | 40 V |
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