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BC849CW_R1_00001 Tech Specifications

Panjit  BC849CW_R1_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Transistor Element Material SILICON
Unit Weight 0.000176 oz
Factory Pack QuantityFactory Pack Quantity 3000
Manufacturer Panjit
Brand Panjit
RoHS Details
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max) 100 mA
Mfr Panjit International Inc.
Product Status Active
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 250 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 420
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Maximum DC Collector Current 100 mA
Collector- Emitter Voltage VCEO Max 30 V
Package Description ,
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Transition Frequency-Nom (fT) 100 MHz
Manufacturer Part Number BC849CW_R1_00001
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC
Risk Rank 5.05
Series GPT-02TAN
Packaging MouseReel
Operating Temperature -55°C ~ 150°C (TJ)
ECCN Code EAR99
Subcategory Transistors
Technology Si
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Configuration Single
Power - Max 250 mW
Polarity/Channel Type NPN
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 30 V
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 420
Collector-Emitter Voltage-Max 30 V
Product Category Bipolar Transistors - BJT
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