- All Products
- Discrete Semiconductor Products
- Transistors - Bipolar (BJT) - Single
- BC817-40-AU_R1_000A1
Panjit BC817-40-AU_R1_000A1 Single BJT Transistors 0.5 A 250 45 V
In Stock
:
60000 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BC817-40-AU_R1_000A1 Tech Specifications
Panjit BC817-40-AU_R1_000A1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-23 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package/Enclosure | SOT-89 | |
| Power dissipation Pd | 1.35W | |
| Collector-emitter maximum voltage VCEO | 45V | |
| Collector continuous current | 1A | |
| Collector-emitter saturation voltage | 500mV | |
| DC current gain hFE | 40 | |
| Characteristic frequency fT | 180MHz | |
| VEBO | 5V | |
| VCBO | 45V | |
| Package | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | |
| Current-Collector (Ic) (Max) | 500 mA | |
| Mfr | Panjit International Inc. | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| Manufacturer Part Number | BC817-40-AU_R1_000A1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | PanJit Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PAN JIT INTERNATIONAL INC | |
| Risk Rank | 5 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 330 mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 250 | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | 100 MHz | |
| Maximum DC Collector Current | 500 mA | |
| Collector- Emitter Voltage VCEO Max | 45 V | |
| Operating temperature | -65℃~150℃ | |
| Series | - | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 330 mW | |
| fet type | NPN | |
| Size | 4.5*2.5*1.5 | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | |
| Frequency - Transition | 100MHz | |
| Collector Base Voltage (VCBO) | 50 V | |
| Collector Current-Max (IC) | 0.5 A | |
| DC Current Gain-Min (hFE) | 250 | |
| Collector-Emitter Voltage-Max | 45 V |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ