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RB521S30T1G Tech Specifications

ON Semiconductor  RB521S30T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number RB521S30
Pin Count 2
Polarity Standard
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 30μA @ 10V
Power Dissipation 200mW
Output Current 200mA
Voltage - Forward (Vf) (Max) @ If 500mV @ 200mA
Forward Current 200mA
Max Reverse Leakage Current 30μA
Operating Temperature - Junction -55°C~125°C
Max Surge Current 1A
Current - Average Rectified (Io) 200mA DC
Forward Voltage 500mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 200mA
Peak Reverse Current 30μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Peak Non-Repetitive Surge Current 1A
Max Forward Surge Current (Ifsm) 1A
Height 700μm
Length 1.3mm
Width 900μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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RB521S30T1G Documents

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