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NTMFD4901NFT3G Tech Specifications

ON Semiconductor  NTMFD4901NFT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.3A 17.9A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.2W
Terminal Form FLAT
Pin Count 8
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN SOURCE
Power - Max 1.1W 1.2W
FET Type 2 N-Channel (Dual), Schottky
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 17.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13.5A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 115 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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