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NTGD1100LT1G Tech Specifications

ON Semiconductor  NTGD1100LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Type General Purpose
Resistance 40MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.3A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTGD1100L
Pin Count 6
Number of Outputs 1Output
Output Type P-Channel
Interface On/Off
Element Configuration Dual
Output Configuration High Side
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Switch Type General Purpose
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 8V
Continuous Drain Current (ID) 3.3A
Ratio - Input:Output 1:1
Gate to Source Voltage (Vgs) 8V
Voltage - Load 1.8V~8V
Drain to Source Breakdown Voltage 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On (Typ) 40m Ω
Drain to Source Resistance 80mOhm
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NTGD1100LT1G Documents

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