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NLSX5012DR2G Tech Specifications
ON Semiconductor NLSX5012DR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 2 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Operating Temperature | -55°C~125°C TA | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Supply Voltage | 3.3V | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | NLSX5012 | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Output Type | Tri-State, Non-Inverted | |
| Number of Channels | 2Channels | |
| Number of Circuits | 1Circuit | |
| Max Supply Voltage | 4.5V | |
| Min Supply Voltage | 900mV | |
| Propagation Delay | 10 ns | |
| Quiescent Current | 2.5μA | |
| Turn On Delay Time | 210 ns | |
| Logic Function | Translator | |
| Data Rate | 100Mbps | |
| Halogen Free | Halogen Free | |
| Interface IC Type | INTERFACE CIRCUIT | |
| High Level Output Current | -20μA | |
| Channel Type | Bidirectional | |
| Low Level Output Current | 20μA | |
| Translator Type | Voltage Level | |
| Voltage - VCCA | 0.9V~4.5V | |
| Voltage - VCCB | 0.9V~4.5V | |
| Features | Auto-Direction Sensing, Power-Off Protection | |
| Length | 4.9mm | |
| Width | 3.9mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NLSX5012DR2G Documents
Download datasheets and manufacturer documentation for NLSX5012DR2G
- DatasheetsNLSX5012 NLSX5012DR2G-ON-Semiconductor-datasheet-13720280.pdf
- Environmental InformationMaterial Declaration NLSX5012DR2G
- RohsStatementON-Semiconductor-NLSX5012DR2G.pdf
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