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NGTG25N120FL2WG Tech Specifications
ON Semiconductor NGTG25N120FL2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
Factory Lead Time | 4 Weeks | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 1.2kV | |
Number of Elements | 1 Element | |
Test Conditions | 600V, 25A, 10 Ω, 15V | |
Operating Temperature | -55°C~175°C TJ | |
Packaging | Tube | |
Published | 2000 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Finish | Tin (Sn) | |
Max Power Dissipation | 385W | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
JESD-30 Code | R-PSFM-T3 | |
Element Configuration | Single | |
Input Type | Standard | |
Power - Max | 385W | |
Transistor Application | POWER CONTROL | |
Polarity/Channel Type | N-CHANNEL | |
Collector Emitter Voltage (VCEO) | 2.4V | |
Max Collector Current | 50A | |
Voltage - Collector Emitter Breakdown (Max) | 1200V | |
Turn On Time | 178 ns | |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A | |
Turn Off Time-Nom (toff) | 430 ns | |
IGBT Type | Trench Field Stop | |
Gate Charge | 178nC | |
Current - Collector Pulsed (Icm) | 100A | |
Td (on/off) @ 25°C | 87ns/179ns | |
Switching Energy | 1.95mJ (on), 600μJ (off) | |
Gate-Emitter Voltage-Max | 20V | |
Gate-Emitter Thr Voltage-Max | 6.5V | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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