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MMBD355LT1G Tech Specifications
ON Semiconductor MMBD355LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
Factory Lead Time | 2 Weeks | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Surface Mount | YES | |
Number of Pins | 3Pins | |
Diode Element Material | SILICON | |
Number of Elements | 2 Elements | |
Power Dissipation (Max) | 225mW | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
HTS Code | 8541.10.00.60 | |
Voltage - Rated DC | 7V | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 80mA | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | MMBD355 | |
Pin Count | 3 | |
Element Configuration | Common Anode | |
Diode Type | Schottky - 1 Pair Common Anode | |
Halogen Free | Halogen Free | |
Forward Voltage | 600mV | |
Peak Reverse Current | 10μA | |
Max Repetitive Reverse Voltage (Vrrm) | 7V | |
Capacitance @ Vr, F | 1pF @ 0V 1MHz | |
Reverse Voltage | 7V | |
Frequency Band | ULTRA HIGH FREQUENCY | |
Diode Capacitance-Max | 1pF | |
Height | 1.01mm | |
Length | 3.04mm | |
Width | 1.4mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
MMBD355LT1G Documents
Download datasheets and manufacturer documentation for MMBD355LT1G
- DatasheetsMMBD/NSVMMBD35xLT1G MMBD355LT1G-ON-Semiconductor-datasheet-8327828.pdf MMBD355LT1G-ON-Semiconductor-datasheet-11834795.pdf
- Environmental InformationMaterial Declaration MMBD355LT1G
- PCN Design/SpecificationCopper Wire 08/Jun/2009 SOT23 16/Sep/2016
- PCN Assembly/OriginMold Compound 08/Sep/2019
- RohsStatementON-Semiconductor-MMBD355LT1G.pdf
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