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MMBD353LT1G Tech Specifications
ON Semiconductor MMBD353LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Surface Mount | YES | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Published | 2009 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.10.00.60 | |
| Capacitance | 1pF | |
| Voltage - Rated DC | 7V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 80mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMBD353 | |
| Pin Count | 3 | |
| Element Configuration | Dual | |
| Diode Type | Schottky - 1 Pair Series Connection | |
| Power Dissipation | 225mW | |
| Forward Current | 10mA | |
| Halogen Free | Halogen Free | |
| Forward Voltage | 600mV | |
| Reverse Recovery Time | 5 ns | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 7V | |
| Capacitance @ Vr, F | 1pF @ 0V 1MHz | |
| Reverse Voltage | 7V | |
| Max Forward Surge Current (Ifsm) | 600mA | |
| Frequency Band | ULTRA HIGH FREQUENCY | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
MMBD353LT1G Documents
Download datasheets and manufacturer documentation for MMBD353LT1G
- PCN Design/SpecificationCopper Wire 08/Jun/2009 SOT23 16/Sep/2016
- PCN Assembly/OriginMold Compound 08/Sep/2019
- DatasheetsMMBD/NSVMMBD35xLT1G MMBD353LT1G-ON-Semiconductor-datasheet-8327828.pdf MMBD353LT1G-ON-Semiconductor-datasheet-11834795.pdf
- Environmental InformationMaterial Declaration MMBD353LT1G
- RohsStatementON-Semiconductor-MMBD353LT1G.pdf
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