MMBD330T1G Tech Specifications

ON Semiconductor  MMBD330T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 1 Element
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW REVERSE LEAKAGE
HTS Code 8541.10.00.60
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBD330
Pin Count 3
Polarity Standard
Max Current Rating 200mA
Element Configuration Single
Diode Type Schottky - Single
Power Dissipation 120mW
Output Current 1A
Forward Current 200mA
Max Reverse Leakage Current 200nA
Max Surge Current 1A
Halogen Free Halogen Free
Forward Voltage 450mV
Average Rectified Current 200mA
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Capacitance @ Vr, F 1.5pF @ 15V 1MHz
Peak Non-Repetitive Surge Current 1A
Max Forward Surge Current (Ifsm) 1A
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1.5pF
Height 900μm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBD330T1G Documents

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