MJE200G Tech Specifications

ON Semiconductor  MJE200G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 1.8V
Number of Elements 1 Element
hFEMin 70
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Max Power Dissipation 15W
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJE200
Pin Count 3
Element Configuration Single
Power Dissipation 15W
Transistor Application AMPLIFIER
Gain Bandwidth Product 65MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Transition Frequency 65MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MJE200G Documents

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MJE200G brand manufacturers: ON Semiconductor, Twicea stock, MJE200G reference price.ON Semiconductor. MJE200G parameters, MJE200G Datasheet PDF and pin diagram description download.You can use the MJE200G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJE200G pin diagram and circuit diagram and usage method of function,MJE200G electronics tutorials.You can download from the Twicea.