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MJD45H11T4G Tech Specifications

ON Semiconductor  MJD45H11T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 1 hour ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage 1V
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC -80V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -8A
Frequency 90MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD45H11
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 90MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MJD45H11T4G Documents

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