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MBD330DWT1G Tech Specifications
ON Semiconductor MBD330DWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
Factory Lead Time | 2 Weeks | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Surface Mount | YES | |
Number of Pins | 6Pins | |
Diode Element Material | SILICON | |
Number of Elements | 2 Elements | |
Operating Temperature | -55°C~125°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Voltage - Rated DC | 30V | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 1A | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Pin Count | 6 | |
Element Configuration | Dual | |
Diode Type | Schottky - 2 Independent | |
Power Dissipation | 120mW | |
Forward Current | 10mA | |
Halogen Free | Halogen Free | |
Forward Voltage | 600mV | |
Peak Reverse Current | 200nA | |
Max Repetitive Reverse Voltage (Vrrm) | 30V | |
Capacitance @ Vr, F | 1.5pF @ 15V 1MHz | |
Frequency Band | ULTRA HIGH FREQUENCY | |
Diode Capacitance-Max | 1.5pF | |
Height | 1mm | |
Length | 2.2mm | |
Width | 1.35mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
MBD330DWT1G Documents
Download datasheets and manufacturer documentation for MBD330DWT1G
- DatasheetsMBD110/330DWT1G Datasheet MBD330DWT1G-ON-Semiconductor-datasheet-8370800.pdf MBD330DWT1G-ON-Semiconductor-datasheet-21210953.pdf MBD330DWT1G-ON-Semiconductor-datasheet-12517612.pdf MBD330DWT1G-ON-Semiconductor-datasheet-11631028.pdf MBD330DWT1G-ON-Semiconductor-datasheet-14063107.pdf
- Environmental InformationMaterial Declaration MBD330DWT1G
- PCN Design/SpecificationMult Dev Material Chgs 20/Dec/2018
- PCN Assembly/OriginMult Dev Wire Conversion 12/Dec/2017
- RohsStatementON-Semiconductor-MBD330DWT1G.pdf
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