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FQA11N90C-F109 Tech Specifications

ON Semiconductor  FQA11N90C-F109 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 130 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 1.1Ohm
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 60 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 130ns
Vgs (Max) ±30V
Fall Time (Typ) 85 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 960 mJ
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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