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FDS6690A Tech Specifications
ON Semiconductor FDS6690A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
Factory Lead Time | 18 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Weight | 130mg | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 11A Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 2.5W Ta | |
Turn Off Delay Time | 28 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | PowerTrench® | |
Published | 2007 | |
JESD-609 Code | e4 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Resistance | 12.5MOhm | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Voltage - Rated DC | 30V | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Current Rating | 11A | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2.5W | |
Turn On Delay Time | 9 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 12.5m Ω @ 11A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1205pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V | |
Rise Time | 5ns | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 9 ns | |
Continuous Drain Current (ID) | 11A | |
Threshold Voltage | 1.9V | |
Gate to Source Voltage (Vgs) | 20V | |
Drain to Source Breakdown Voltage | 30V | |
Dual Supply Voltage | 30V | |
Height | 1.5mm | |
Length | 5mm | |
Width | 4mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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