In Stock
:
21000 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FDN5618P Tech Specifications
ON Semiconductor FDN5618P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 30mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1.25A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW Ta | |
| Turn Off Delay Time | 16.5 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 170mOhm | |
| Voltage - Rated DC | -60V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1.25A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Turn On Delay Time | 6.5 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 1.25A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.8nC @ 10V | |
| Rise Time | 8ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 1.2A | |
| Threshold Voltage | -1.6V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -60V | |
| Dual Supply Voltage | -60V | |
| Max Junction Temperature (Tj) | 150°C | |
| Nominal Vgs | 20 V | |
| Height | 1.22mm | |
| Length | 2.92mm | |
| Width | 1.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
FDN5618P Documents
Download datasheets and manufacturer documentation for FDN5618P
- PCN Assembly/OriginMult Dev Assembly/Test Add 8/Jul/2019
- PCN Design/SpecificationMold Compound 08/April/2008 Wire Bonding 07/Nov/2008
- DatasheetsFDN5618P-ON-Semiconductor-datasheet-85488294.pdf FDN5618P-ON-Semiconductor-datasheet-86688477.pdf FDN5618P-Fairchild-Semiconductor-datasheet-67356179.pdf FDN5618P-Fairchild-Semiconductor-datasheet-10454208.pdf FDN5618P FDN5618P-ON-Semiconductor-datasheet-30378.pdf FDN5618P-ON-Semiconductor-datasheet-98394451.pdf FDN5618P-ON-Semiconductor-datasheet-130063979.pdf FDN5618P-Fairchild-Semiconductor-datasheet-10845346.pdf
- Environmental InformationMaterial Declaration FDN5618P
- PCN PackagingBinary Year Code Marking 15/Jan/2014 Mult Devices 24/Oct/2017
- ReachStatementFairchild-Semiconductor-FDN5618P.pdf
- TechnicalDrawingFairchild-Semiconductor-FDN5618P.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



