FDN5618P Tech Specifications

ON Semiconductor  FDN5618P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.25A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 16.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 170mOhm
Voltage - Rated DC -60V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.25A
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 13.8nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage -60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 20 V
Height 1.22mm
Length 2.92mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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