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FDMS3604AS Tech Specifications
ON Semiconductor FDMS3604AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 13A 23A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 31 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 1W | |
| JESD-30 Code | R-PDSO-N6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.5W | |
| Case Connection | DRAIN SOURCE | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 2.7V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1695pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
| Rise Time | 4.8ns | |
| Fall Time (Typ) | 3.4 ns | |
| Continuous Drain Current (ID) | 23A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 13A | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 2 V | |
| Feedback Cap-Max (Crss) | 75 pF | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
FDMS3604AS Documents
Download datasheets and manufacturer documentation for FDMS3604AS
- DatasheetsFDMS3604AS
- PCN Design/SpecificationLogo 17/Aug/2017
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