FDMS3604AS Tech Specifications

ON Semiconductor  FDMS3604AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A 23A
Number of Elements 2 Elements
Turn Off Delay Time 31 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
JESD-30 Code R-PDSO-N6
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1695pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 4.8ns
Fall Time (Typ) 3.4 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2 V
Feedback Cap-Max (Crss) 75 pF
Height 1.05mm
Length 5mm
Width 6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
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FDMS3604AS Documents

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