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FDMQ86530L Tech Specifications

ON Semiconductor  FDMQ86530L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 12-WDFN Exposed Pad
Number of Pins 12Pins
Weight 242.3mg
Transistor Element Material SILICON
Manufacturer Package Identifier 511CR
Number of Elements 4 Elements
Turn Off Delay Time 22 ns
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Series GreenBridge™ PowerTrench®
Published 2010
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation 1.9W
Terminal Position DUAL
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN SOURCE
Turn On Delay Time 8.8 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2295pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.0175Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 50A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 15 pF
Turn On Time-Max (ton) 28ns
Height 800μm
Length 5mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FDMQ86530L Documents

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