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FDMC6675BZ Tech Specifications

ON Semiconductor  FDMC6675BZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8Pins
Weight 200mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9.5A Ta 20A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.3W Ta 36W Tc
Turn Off Delay Time 44 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2010
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 14.4MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ULTRA-LOW RESISTANCE
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.4m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 9.5A
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 32A
Height 750μm
Length 3.3mm
Width 3.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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FDMC6675BZ Documents

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