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FDG6301N-F085P Tech Specifications
ON Semiconductor FDG6301N-F085P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 36 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 220mA Ta | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 300mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 4 Ω @ 220mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 25V | |
| Drain Current-Max (Abs) (ID) | 0.22A | |
| Drain-source On Resistance-Max | 4Ohm | |
| DS Breakdown Voltage-Min | 25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |
FDG6301N-F085P Documents
Download datasheets and manufacturer documentation for FDG6301N-F085P
- ReachStatementON-Semiconductor-company-79.pdf
- DatasheetsFDG6301N-F085 FDG6301N-F085P-ON-Semiconductor-datasheet-139010289.pdf
- PCN Assembly/OriginFDG63YYY 30/Jan/2019
- Environmental InformationMaterial Declaration FDG6301N-F085P
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