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FDA16N50-F109 Tech Specifications

ON Semiconductor  FDA16N50-F109 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 205W Tc
Turn Off Delay Time 65 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series UniFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN
Additional Feature AVALANCHE RATED
Peak Reflow Temperature (Cel) 260
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 205W
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1945pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 150ns
Vgs (Max) ±30V
Fall Time (Typ) 80 ns
Continuous Drain Current (ID) 16.5A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 66A
Avalanche Energy Rating (Eas) 780 mJ
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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FDA16N50-F109 Documents

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