- All Products
- Discrete Semiconductor Products
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- DTC124XET1G
In Stock
:
2970 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
DTC124XET1G Tech Specifications
ON Semiconductor DTC124XET1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Collector-Emitter Saturation Voltage | 250mV | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 0.47 | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | DTC124 | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Resistor - Base (R1) | 22 k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Height | 800μm | |
| Length | 1.65mm | |
| Width | 900μm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DTC124XET1G Documents
Download datasheets and manufacturer documentation for DTC124XET1G
- PCN Design/SpecificationCopper Wire 29/Oct/2009
- DatasheetsDTC124XET1G-ON-Semiconductor-datasheet-11034369.pdf DTC124XET1G-ON-Semiconductor-datasheet-110755714.pdf MUN(2,5)234, MMUN2234L, DTC124Xyy DTC124XET1G-ON-Semiconductor-datasheet-15675984.pdf
- PCN Assembly/OriginWafer Source Addition 26/Nov/2014
- Environmental InformationMaterial Declaration DTC124XET1G
- RohsStatementON-Semiconductor-DTC124XET1G.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



