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BAW56LT1G Tech Specifications

ON Semiconductor  BAW56LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Voltage - Rated DC 70V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAW56L
Pin Count 3
Element Configuration Common Anode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 2.5μA @ 70V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Max Reverse Leakage Current 2.4μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 4A
Output Current-Max 0.1A
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 70V
Average Rectified Current 200mA
Reverse Recovery Time 6 ns
Peak Reverse Current 2.5μA
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 4A
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 6 ns
Height 940μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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