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BAV199LT1G Tech Specifications
ON Semiconductor BAV199LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Cut Tape (CT) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | LOW LEAKAGE CURRENT | |
| HTS Code | 8541.10.00.80 | |
| Capacitance | 2pF | |
| Voltage - Rated DC | 70V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 215mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAV199L | |
| Pin Count | 3 | |
| Element Configuration | Common Cathode | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5nA @ 70V | |
| Power Dissipation | 300mW | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Forward Current | 715mA | |
| Operating Temperature - Junction | -65°C~150°C | |
| Max Surge Current | 2A | |
| Output Current-Max | 0.215A | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 215mA DC | |
| Forward Voltage | 1.25V | |
| Max Reverse Voltage (DC) | 70V | |
| Average Rectified Current | 215mA | |
| Reverse Recovery Time | 3 μs | |
| Peak Reverse Current | 5nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 70V | |
| Peak Non-Repetitive Surge Current | 2A | |
| Diode Configuration | 1 Pair Series Connection | |
| Max Forward Surge Current (Ifsm) | 500mA | |
| Recovery Time | 3 μs | |
| Height | 1.016mm | |
| Length | 3.0226mm | |
| Width | 1.397mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BAV199LT1G Documents
Download datasheets and manufacturer documentation for BAV199LT1G
- PCN Design/SpecificationGlue Mount Process 11/July/2008 SOT23 16/Sep/2016
- DatasheetsBAV,SBAV199L BAV199LT1G-ON-Semiconductor-datasheet-7830619.pdf BAV199LT1G-ON-Semiconductor-datasheet-11853431.pdf BAV199LT1G-ON-Semiconductor-datasheet-9796193.pdf BAV199LT1G-ON-Semiconductor-datasheet-14051923.pdf
- Environmental InformationMaterial Declaration BAV199LT1G
- RohsStatementON-Semiconductor-BAV199LT1G.pdf
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