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BAS16LT1G Tech Specifications
ON Semiconductor BAS16LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Cut Tape (CT) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Capacitance | 2pF | |
| Voltage - Rated DC | 75V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 200mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAS16 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1μA @ 100V | |
| Power Dissipation | 300mW | |
| Output Current | 200mA | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 1μA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Surge Current | 500mA | |
| Halogen Free | Halogen Free | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Current - Average Rectified (Io) | 200mA DC | |
| Forward Voltage | 1.25V | |
| Max Reverse Voltage (DC) | 75V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 6 ns | |
| Peak Reverse Current | 1μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 75V | |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz | |
| Peak Non-Repetitive Surge Current | 500mA | |
| Max Forward Surge Current (Ifsm) | 500mA | |
| Recovery Time | 6 ns | |
| Height | 1.016mm | |
| Length | 3.0226mm | |
| Width | 1.397mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
BAS16LT1G Documents
Download datasheets and manufacturer documentation for BAS16LT1G
- PCN Assembly/OriginMult Dev Wafer Add 16/Nov/2018
- PCN Design/SpecificationGold to Copper Wire 08/May/2007 SOT23 16/Sep/2016
- DatasheetsBAS,SBAS16L BAS16LT1G-ON-Semiconductor-datasheet-8330154.pdf BAS16LT1G-ON-Semiconductor-datasheet-37114053.pdf BAS16LT1G-ON-Semiconductor-datasheet-15850004.pdf BAS16LT1G-ON-Semiconductor-datasheet-11614852.pdf BAS16LT1G-ON-Semiconductor-datasheet-14053658.pdf BAS16LT1G-ON-Semiconductor-datasheet-9721364.pdf
- Environmental InformationMaterial Declaration BAS16LT1G
- RohsStatementON-Semiconductor-BAS16LT1G.pdf
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