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4N35TVM Tech Specifications

ON Semiconductor  4N35TVM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.400, 10.16mm)
Number of Pins 6Pins
Weight 864mg
Current Transfer Ratio-Min 100% @ 10mA
Number of Elements 1 Element
Operating Temperature -40°C~100°C
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature UL RECOGNIZED, VDE APPROVED
Max Power Dissipation 250mW
Base Part Number 4N35
Voltage - Isolation 4170Vrms
Output Voltage 30V
Output Type Transistor with Base
Configuration SINGLE
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.18V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 60mA
Max Output Voltage 30V
Rise Time 2μs
Fall Time (Typ) 2 μs
Collector Emitter Voltage (VCEO) 300mV
Reverse Breakdown Voltage 6V
Max Input Current 60mA
Turn On / Turn Off Time (Typ) 2μs, 2μs
Current Transfer Ratio 100%
Dark Current-Max 50nA
Height 5.08mm
Length 8.89mm
Width 6.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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4N35TVM Documents

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