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2SC5551AE-TD-E Tech Specifications
ON Semiconductor 2SC5551AE-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
Factory Lead Time | 7 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | TO-243AA | |
Surface Mount | YES | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 30V | |
Number of Elements | 1 Element | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2009 | |
JESD-609 Code | e6 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Bismuth (Sn/Bi) | |
Max Power Dissipation | 1.3W | |
Terminal Form | FLAT | |
Frequency | 3.5GHz | |
Pin Count | 3 | |
Element Configuration | Single | |
Power Dissipation | 1.3W | |
Case Connection | COLLECTOR | |
Gain Bandwidth Product | 3.5 GHz | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 30V | |
Max Collector Current | 300mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA 5V | |
Transition Frequency | 3500MHz | |
Collector Base Voltage (VCBO) | 40V | |
Emitter Base Voltage (VEBO) | 2V | |
Collector-Base Capacitance-Max | 4pF | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
2SC5551AE-TD-E Documents
Download datasheets and manufacturer documentation for 2SC5551AE-TD-E
- Datasheets2SC5551A
- Environmental InformationMaterial Declaration 2SC5551AE-TD-E
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