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2SA2016-TD-E Tech Specifications

ON Semiconductor  2SA2016-TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 240mV
Number of Elements 1 Element
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 3.5W
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Configuration SINGLE
Power Dissipation 1.3W
Case Connection COLLECTOR
Power - Max 3.5W
Transistor Application SWITCHING
Gain Bandwidth Product 330MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 2A
Transition Frequency 290MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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2SA2016-TD-E Documents

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